ISSN: 1003-6326
CN: 43-1239/TG
CODEN: TNMCEW

Vol. 19    No. 3    June 2009

[PDF]    [Flash]
Preparation and properties of SiCN diffusion barrier layer for
Cu interconnect in ULSI
ZHOU Ji-cheng(周继承)1, SHI Zhi-jie(石之杰)2, ZHENG Xu-qiang(郑旭强)2
(1. School of Energy Science and Engineering, Central South University, Changsha 410083, China;
2. School of Physical Science and Technology, Central South University, Changsha 410083, China
)
Abstract: SiCN thin films and Cu/SiCN/Si structures were fabricated by magnetron sputtering. And some samples underwent the rapid thermal annealing(RTA) processing. The thin-film surface morphology, crystal structure and electronic properties were characterized by atomic force microscopy(AFM), X-ray diffractometry(XRD), Fourier transform infrared transmission(FTIR) and four-point probe(FPP) analyses. The results reveal the formation of complex networks among the three elements, Si, C and N, and the existence of different chemical bonds in the SiCN films, such as Si—C, Si—N, C—N and C=N. The as-deposited SiCN thin films are amorphous in the Cu/SiCN/Si structures and have good thermal stability, and the SiCN thin films are still able to prevent the diffusion reaction between Cu and Si interface after RTA processing at 600 ℃ for 5 min.
Key words: SiCN thin film; magnetron sputtering; dielectric diffusion barrier; Cu interconnect for ULSI
Superintended by The China Association for Science and Technology (CAST)
Sponsored by The Nonferrous Metals Society of China (NFSOC)
Managed by Central South University (CSU) 湘ICP备09001153号-9