Growth interface of In-doped CdMnTe from Te solution with vertical Bridgman method under ACRT technique
(1. State Key Laboratory of Solidification Processing, School of Materials Science and Engineering,
Northwestern Polytechnical University, Xi’an 710072, China;
2. Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education),
Department of Physics, Shanghai Jiao Tong University, Shanghai 200240, China)
Northwestern Polytechnical University, Xi’an 710072, China;
2. Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education),
Department of Physics, Shanghai Jiao Tong University, Shanghai 200240, China)
Abstract: CdMnTe (CMT) crystals were grown from Te solution with vertical Bridgman method under accelerated crucible rotation (ACRT) technique. Ingot in diameter of 30 mm and length of 60 mm was obtained. The result shows that as-grown CMT has fewer twins compared with the one grown by conventional vertical Bridgman method. However, IR microscopy shows that the microscopic growth interface morphology is non-uniform and irregular, which is attributed to higher Te inclusions density. Meanwhile, the laser confocal microscope images reveal that the Te phases are deposited randomly in the Te-rich CMT region with irregular shapes and voids. By optimizing the growth parameters to obtain a smooth interface, the Te solution vertical Bridgman technique can effectively reduce the twins in CMT crystal.
Key words: solution growth; vertical Bridgman method; CdMnTe; twins; growth interface; Te inclusions