Defect-engineered rGO-CoNi2S4 with enhanced electrochemical performance for asymmetric supercapacitor
(1. College of Materials Materials Science and Engineering, Shanghai University of Engineering Science, Shanghai 201620, China;
2. School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China)
2. School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China)
Abstract: To explore the effect of sulfur vacancies in transition metal sulfide on the electrochemical properties of anode materials, the graphene oxide (GO) and CoNi2S4 were used as the raw materials to synthesize the rGO10-CoNi2S4-x composite electrode materials by the solvothermal method. The obtained rGO10-CoNi2S4-x electrode materials with sulfur vacancies consist of nanoflakes and nanorods. The galvanostatic charge-discharge test of the rGO10-CoNi2S4-x electrode materials shows a great specific capacitance of 3050.1 F/g at a current density of 1 A/g. Moreover, the electrode materials still remain rate capability retention of 86.1% when the current density increases from 1 to at 10 A/g. The rGO10-CoNi2S4-x composite containing sulfur vacancies has higher specific capacitance and better rate capability in comparison to the pristine rGO-CoNi2S4 without containing sulfur defects. The optimized rGO10-CoNi2S4-x composite electrode materials with sulfur vacancies exhibit outstanding cycle stability and rate performance.
Key words: rGO10-CoNi2S4-x composite; supercapacitor; electrochemical performance; sulfur vacancy; solvothermal method