Characterization of CuInS2 thin films prepared by sulfurization of Cu-In precursor
(China Iron & Steel Research Institute Group, Advanced Technology & Materials Co. Ltd., Beijing 100081, China)
Abstract: CuInS2 thin films were prepared by sulfurization of Cu-In precursors. The influences of the deposition sequence of Cu and In layers, such as Cu/In, Cu/In/In, and In/Cu/In, on structure, topography, and optical properties of CuInS2 thin films were investigated. X-ray diffraction results show that the deposition sequence of Cu and In layers affects the crystalline quality of CuInS2 films. Atomic force microstructure images reveal that the grain size and surface roughness are related to the deposition sequence used. When the deposition sequence of precursor is In/Cu/In, the CuInS2 thin films show a single-phase chalcopyrite structure with (112) preferred orientation. The surface morphology of CIS films is uniform and compacted. The absorption coefficient is larger than 104 cm−1 with optical band gap Eg close to 1.4 eV.
Key words: CuInS2 thin film; precursor; sulfurization; deposition sequence