a-C∶F∶H films prepared by PECVD①
(1. School of Physics Science and Technology, Central South University, Changsha 410083, China;
2. School of Electric Engineering, University of Shanghai Science and Technology, Shanghai 200093, China;
3. Institute of Technology Physics, Chinese Academy of Sciences, Shanghai 200083, China)
2. School of Electric Engineering, University of Shanghai Science and Technology, Shanghai 200093, China;
3. Institute of Technology Physics, Chinese Academy of Sciences, Shanghai 200083, China)
Abstract: Fluorinated amorphous hydrogenated a-C∶F∶H carbon thin films were deposited using radio frequency plasma enhanced chemical vapor deposition(RF-PECVD) reactor with CF4and CH4as source gases and were annealed in a N2 at- mosphere. The properties of these films were evaluated by FTIR spectrometry, UV-VIS spectrophotometry and single wavelength spectroscopic ellipsometry. A correspondence relativity connection between the deposition rate and technology
was found. The chemical bonding structures and the content of CHxand CFxin the films are transformed and the optical band gap decreases monotonically with increasing temperature after annealing. The dielectric constant is increased with decreasing content of F in the films and the optical band gap is decreased with decreasing the content of H in the film.
was found. The chemical bonding structures and the content of CHxand CFxin the films are transformed and the optical band gap decreases monotonically with increasing temperature after annealing. The dielectric constant is increased with decreasing content of F in the films and the optical band gap is decreased with decreasing the content of H in the film.
Key words: a-C∶F∶H thin films; PECVD; dielectric constant; optical band gap