Effect of gas pressure on residual stresses
in AlN films deposited on Al substrates
in AlN films deposited on Al substrates
(1. School of Materials Science and Engineering,
Harbin Institute of Technology, Harbin 150001, China;
2. Faculty of Engineering, Tokushuima University, Tokushima, Japan)
Harbin Institute of Technology, Harbin 150001, China;
2. Faculty of Engineering, Tokushuima University, Tokushima, Japan)
Abstract: AlN Films were prepared on Al alloy substrates by cathode sputtering.The surface morphology of AlN films was studied by atomic force microscopy (AFM) , the effect of gas pressure on crystal orientation and residual stress in AlN films was investigated by X-ray diffraction. The AFM images show that many nucleated AlN islands appear to be randomly distributed on the Al surface and are fairly round in shape.The X-ray diffraction(XRD) show that the AlN films have a selective orientation in the normal of the substrate and have good selective orientation deposited at low gas pressure . Compressive residual stress are found in films and increases as gas pressure decreases.
Key words: AlN thin film; residual stress; sputtering; gas pressure