Electrochemical Behavior of
Er(Ⅲ) InN, N-dimethylformamide
Er(Ⅲ) InN, N-dimethylformamide
(School of Chemistry and Chemical Engineering, Zhongshan University,
Guangzhou 510275, China)
Guangzhou 510275, China)
Abstract: The cyclic voltammetry, current-time curve at potential step and potential-time curve of galvanostatic method were used to investigate the electrochemical behavior of Er(Ⅲ) in ErCl3-LiClO4-DMF(N, N-dimethylformamide) system on Pt and Cu electrodes. Results indicate that the electroreducation of Er(Ⅲ) to Er(0) is irreversible on Pt and Cu electrodes, the diffusion coefficient and electron transfer coefficient of Er(Ⅲ) in 0.01mol/L ErCl3-0.1mol/L LiClO4-DMF system at 303K are 1.96×10-6 cm2·s-1 and 0.081 respectively. The Er metal film was prepared by galvanostatic electrolysis on Cu electrode in ErCl3-LiClO4-DMF system at 40A·m-2(current density). The deposites composed of Er over 95%(mass fraction) were obtained.
Key words: Er(Ⅲ); N, N-dimethylformamide(DMF); diffusion coefficient; electron transfer coefficient; electrodeposition