Voltage-induced material removal mechanism of copper for electrochemical-mechanical polishing applications
(1. Nano-Information Material & Device Laboratory, Daebul University, Chonnam, 526-702, Korea;
2. School of Fusion Technology, Daebul University, Chonnam, 526-702, Korea)
2. School of Fusion Technology, Daebul University, Chonnam, 526-702, Korea)
Abstract: The current—voltage (I—V) curves, such as linear sweep voltammetry (LSV) and cyclic voltammetry (CV), were employed to evaluate the effect of electrolyte concentration on the electrochemical reaction trend. From the I—V curve, the electrochemical states of active, passive, transient and trans-passive region could be characterized. And then, the mechanism of the process of voltage-induced material removal in electrochemical mechanical polishing (ECMP) of copper was investigated. Scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) analyses were used to observe the surface profile. Finally, the oxidation and reduction processes of the Cu surface were monitored by the repetition of anodic and cathodic potential from cyclic voltammetry (CV) method in acid- and alkali-based electrolyte.
Key words: electrochemical mechanical polishing; linear sweep voltammetry; cyclic voltammetry; HNO3; KNO3; electrolyte