Spectroscopic properties of vacancies and trap levels in
Lu3Al5O12׃Ce3+ crystals
Lu3Al5O12׃Ce3+ crystals
(1. State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University,
Guangzhou 510275, China;
2. State Key Laboratory of Crystal Materials, Shandong University, Ji’nan 250100, China)
Guangzhou 510275, China;
2. State Key Laboratory of Crystal Materials, Shandong University, Ji’nan 250100, China)
Abstract: In order to study the spectroscopic properties of vacancies and trap levels in Lu3Al5O12׃Ce3+ (LuAG׃Ce3+) crystal, the <111>-oriented LuAG׃Ce3+ crystal grown in pure nitrogen atmosphere by Czochralski method was annealed in oxidizing atmosphere (air) and reducing atmosphere (H2+N2), respectively. The excitation and emission spectra of LuAG׃Ce3+ crystal after different thermal annealing treatments were measured in the temperature range of 8−450 K, and the thermally stimulated luminescence curves of LuAG׃Ce3+ crystal were characterized. It is found that the oxygen vacancies in LuAG׃Ce3+ crystal are effectively eliminated through the annealing treatment in air and four trap levels are observed in as-grown LuAG׃Ce3+ crystal with temperature position peaking at 110, 210, 325 and 475 ℃, respectively.
Key words: Lu3Al5O12׃Ce3+ crystal; oxygen vacancy; thermoluminescence