NITROGEN-OXYGEN COMPLEXES IN SILICON AND THEIR DONOR ACTION
(State Key Laboratory of Silicon Material Science,Zhejiang University, Hangzhou 310027, P. R. China)
Abstract: The electronic characteristic of nitrogen-doped CZ silicon is completely different from that of nitrogen-doped FZ silicon and nitrogen-undoped CZ silicon. It has been found that nitrogen-doped CZ silicon can generate a kind of nitrogen related new donor which forms and disappears with the formation and disappearance of nitrogen-oxygen complexes respectively. The relationship between the formation and disappearance of nitrogen-new donor and annealing condition was studied, and the experimental results were discussed.
Key words: nitrogen-oxygen complexes nitrogen-new donor CZ silicon