PRESSURE－INDUCED 4p→4s ELECTRON TRANSFER AND ITS EFFECT ON ELECTRICAL TRANSPORT OF COPPER
(Institute of High-Temperature and High-Pressure Physics; Chengdu University of Science and Technology; Chengdu 610065)
Abstract: On the basis of band theories,the pressure-induced 4p→4s electron transfer of copper andits effect on the densities of states near Fermi level EF in the 4p and 4s bands are discussed. The explanation for the pressure dependence of electrical resistance of copper under compression up to 41GPa is offered.
Key words: high pressure copper electron transfer electrical resistance