CALCULATION OF PHASE DIAGRAM FOR PSEUDOBINARY GaAs-InAs
(1.General Research Institute for Nonferrous Metals; Beijing 100088
2.Laboratoire de Thermodynamique et Physico-chimie Metallurgiques ENSEEG; BP75; 38402 St.martin d′H eres; France)
2.Laboratoire de Thermodynamique et Physico-chimie Metallurgiques ENSEEG; BP75; 38402 St.martin d′H eres; France)
Abstract: The phase diagram for the pseudobinary GaAs-InAs has been calculated using the optimized thermodynamic data on accounting the influence of the elastic energy. which is induced by the mismatch of the growing lattice with the substrate in the process of epitaxy. The result shows that the miscibility gap in the solic phase of this system would be restrained by this elastic energy.
Key words: GaAs-InAs; Ⅲ-Ⅴ compound calculation of phase diagram; miscibility gap;