Dielectric properties of doped silicon carbide powder by thermal diffusion
(State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, China)
Abstract: The doped SiC powders were prepared by the thermal diffusion process in nitrogen atmosphere at 2 000 ℃. Graphite film with holes was used as the protective mask. The dielectric properties of the prepared SiC powders at high frequencies were investigated. The complex permittivity of the undoped and doped SiC powders was measured within the microwave frequency range from 8.2 to 12.4 GHz. The XRD patterns show that before and after heat treatment no new phase appears in the samples of undoped and nitrogen-doped, however, in the aluminum-doped sample the AlN phase appears. At the same time the Raman spectra indicate that after doping the aluminum and nitrogen atoms affect the bond of silicon and carbon. The dielectric real part (ε′) and imaginary part (ε") of the nitrogen-doped sample are higher than those of the other samples. The reason is that in the nitrogen-doped the N atom substitutes the C position of SiC crystal and induces more carriers and in the nitrogen and aluminum-doped the concentration of carriers and the effect of dielectric relaxation will decrease because of the aluminum and nitrogen contrary dopants.
Key words: silicon carbide; dielectric properties; thermal diffusion