ISSN: 1003-6326
CN: 43-1239/TG
CODEN: TNMCEW

Vol. 17    Special 1    November 2007

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Deposition of photocatalytic TiO2 and N-doped TiO2 films by arc ion plating
LI Ming-sheng(李明升), ZHANG Shu-juan(张淑娟), LOU Jin(娄  瑾), LIU Ting-zhi(刘庭芝),
ZHOU Ze-hua(周泽华), YANG Gan-lan(杨干兰), HU Chang-yuan(胡长员), LI Wen-kui(李文魁)
(Jiangxi Key Laboratory of Surface Engineering, Jiangxi Science and Technology Normal University,
Nanchang 330013,China
)
Abstract: TiO2 and N-doped TiO2 films were deposited on the glass substrates by arc ion plating method. The results show that the deposition rate does not change with the increasing deposition time. The increase of mass flow rate of N2 gives rise to the increase of deposition rate. All as-deposited TiO2 and N-doped TiO2 films are amorphous. The anatase TiO2 phase with preferred orientation (101) is acquired by post-annealing at 400 ℃ for 2 h. The incorporation of N into the TiO2 films and the heat treatment extensively shift the band edge to the visible light region.
Key words: arc ion plating; photocatalytic TiO2; N-doped TiO2; absorption edge
Superintended by The China Association for Science and Technology (CAST)
Sponsored by The Nonferrous Metals Society of China (NFSOC)
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