ISSN: 1003-6326
CN: 43-1239/TG
CODEN: TNMCEW

Vol. 17    Special 1    November 2007

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Vacuum distillation refining of metallurgical grade silicon (Ⅰ)
——Thermodynamics on removal of phosphorus from
metallurgical grade silicon
WEI Kui-xian(魏奎先)1, 2, MA Wen-hui(马文会)1, 2, DAI Yong-nian(戴永年)1, 2,
YANG Bin(杨 斌)1, 2, LIU Da-chun(刘大春)1, 2, WANG Jing-fu(
(1. National Engineering Laboratory for Vacuum Metallurgy, Faculty of Materials and Metallurgical Engineering, Kunming University of Science and Technology, Kunming 650093, China;
2. Key Laboratory of Vacuum Metallurgy of Non-ferrous Metals of Yunnan Province, Kunming 650093, China
)
Abstract: The removal of impurity phosphorus from metallurgical grade silicon is one of the major problems on purification of metallurgical grade silicon for solar grade silicon preparation. The thermodynamics on vacuum refining process of the metallurgical grade silicon was studied via separation coefficient of impurity phosphorus in the metallurgical grade silicon and vapor-liquid equilibrium composition diagram of Si-P binary alloy at different temperatures. The behaviors of impurity phosphorus in the vacuum distillation process were examined. The results show that the vacuum distillation should be taken to obtain silicon with less than    10−7 P, and the impurity phosphorus is volatilized easily by vacuum distillation in thermodynamics. Phosphorus is distilled from the molten silicon and concentrated in vapor phase.
Key words: metallurgical grade silicon; solar grade silicon; refining; vacuum distillation; thermodynamics; phosphorus removal
Superintended by The China Association for Science and Technology (CAST)
Sponsored by The Nonferrous Metals Society of China (NFSOC)
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