Thermal and piezoelectric properties of Bi3.15Nd0.85Ti3O12 thin film prepared by metal organic decomposition
(1. Faculty of Materials and Photoelectronic Physics, Xiangtan University, Xiangtan 411105, China;
2. School of Mathematics and Physics, University of South China, Hengyang 421001, China;
3. Key Laboratory for Low Dimensional Materials and Application Technology of
Ministry of Education, Xiangtan University, Xiangtan 411105, China;
4. School of Aerospace, Tsinghua University, Beijing 100084, China)
2. School of Mathematics and Physics, University of South China, Hengyang 421001, China;
3. Key Laboratory for Low Dimensional Materials and Application Technology of
Ministry of Education, Xiangtan University, Xiangtan 411105, China;
4. School of Aerospace, Tsinghua University, Beijing 100084, China)
Abstract: Bi3.15Nd0.85Ti3O12 (BNT) powder and thin film were prepared by metal organic decomposition (MOD) method. The heat flow curve of BNT powder was measured with a modulated temperature differential scanning calorimeter, and thermal physical parameters such as thermal conductivity coefficient and thermal diffusion coefficient were obtained from the heat flow curve. The phase identification, ferroelectric, and piezoelectric properties of BNT thin film annealed at 700 °C were investigated with X-ray diffractometer, ferroelectric analyzer, and scanning probe microscope. The results show that the thin films consisting of a single phase of bismuth-layered perovskite are polycrystalline, without a preferred orientation. Remnant polarization 2Pr is 63.2 μC/cm2 under 530 kV/cm applied field, and the effective piezoelectric coefficient d33 is 30 pm/V.
Key words: bismuth-layered perovskite; metal organic decomposition (MOD); thermal parameter; remnant polarization; effective piezoelectric coefficient