Effects of annealing temperature on microstructure and
ferroelectric properties of Bi0.5(Na0.85K0.15)0.5TiO3 thin films
ferroelectric properties of Bi0.5(Na0.85K0.15)0.5TiO3 thin films
(1. Faculty of Materials, Optoelectronics and Physics, Xiangtan University, Xiangtan 411105, China;
2. Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education,
Xiangtan University, Xiangtan 411105, China)
2. Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education,
Xiangtan University, Xiangtan 411105, China)
Abstract: Bi0.5(Na0.85K0.15)0.5TiO3 (BNKT15) thin films were synthesized by metal-organic decomposition (MOD) at annealing temperatures of 650, 680, 710 and 740 °C, and the effects of annealing temperature on the microstructure, dielectric properties, remnant polarization (2Pr) and leakage current density were studied with X-ray diffractometer, atomic force microscope, precision impedance analyzer, ferroelectric analysis station and semiconductor parameter tester. The results show that the thin film annealed at 710 °C exhibits a typical perovskite structure without predominant orientation and a smooth surface with evenly distributed grains. 2Pr value (67.4 μC/cm2 under 830 kV/cm) and the leakage current density (1.6×10−6 A/cm2 at 170 kV/cm) for BNKT15 thin film annealed at 710 °C are better than those for thin films annealed at other temperatures.
Key words: BNKT15 thin film; metal-organic decomposition; annealing temperature; remnant polarization; leakage current density