Microstructure and electrical properties of Lu2O3-doped
ZnO-Bi2O3-based varistor ceramics
ZnO-Bi2O3-based varistor ceramics
(1. School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, China;
2. Research Center of Nano Science and Technology, Shanghai University, Shanghai 200444, China;
3. State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry,
Jilin University, Changchun 130012, China)
2. Research Center of Nano Science and Technology, Shanghai University, Shanghai 200444, China;
3. State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry,
Jilin University, Changchun 130012, China)
Abstract: Lu2O3-doped ZnO-Bi2O3-based varistor ceramics samples were prepared by a conventional mixed oxide route and sintered at temperatures in the range of 900−1 000 °C, and the microstructures of the varistor ceramics samples were characterized by X-ray diffractometry (XRD) and scanning electron microscopy (SEM); at the same time, the electrical properties and V—I characteristics of the varistor ceramics samples were investigated by a DC parameter instrument for varistors. The results show that the ZnO-Bi2O3-based varistor ceramics with 0.3% Lu2O3 (molar fraction) sintered at 950 °C exhibit comparatively ideal comprehensive electrical properties. The XRD analysis of the samples shows the presence of ZnO, Bi-rich, spinel Zn7Sb2O12 and Lu2O3-based phases.
Key words: ZnO-Bi2O3 ceramics; varistor; rare earth; electrical properties