Influence of Si on stability of TiC in Al melts

ISSN: 1003-6326
CN: 43-1239/TG
CODEN: TNMCEW

Vol. 21 No. 7 July 2011

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1. Department of Mechanical Engineering, North China Electric Power University, Baoding 071003, China;
2. Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials of Min

(Shandong University, Ji’nan 250061, China)

Abstract: The influence of Si on the stability of TiC in Al melts was studied. It is found that TiC particles in Al melts become unstable with the addition of Si. When the melting temperature is below 890 °C, TiC will react with Al and Si to form TiAl_xSi_y and Al₄C₃ phases. But if the melt temperature is above 890 °C, TiC will react with Al and Si to form to Ti₃SiC₂ and Al₄C₃. It is considered that the influence of Si on the stability of TiC in Al melts is due to its incursion into TiC crystal lattice during the holding, which will cause serious lattice distortion in TiC and then speed up the out-diffusion of surrounded C atoms.

Key words: TiC; silicon; Al-Si alloy; stability

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