Precipitates identification in R2PdSi3 (R= Pr, Tb and Gd) single crystal growth
(1. State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China;
2. IFW Dresden, Leibniz-Institut for Solid State and Materials Research, Dresden 01171, Germany)
2. IFW Dresden, Leibniz-Institut for Solid State and Materials Research, Dresden 01171, Germany)
Abstract: Floating zone method with optical radiation heating was applied to growing a class of R2PdSi3 (R=Pr, Tb and Gd) single crystals due to its containerless melting and high stability of the floating zone. One serious problem during the single crystal growth, precipitates of secondary phases, was discussed from the following four parts: precipitates from the raw materials and preparation process, precipitates formed during the growing process, precipitates in the melts and precipitates in the grown crystals. Annealing treatment and composition shift can effectively reduce the precipitates which are not formed during the crystallization but precipitated on post-solidification cooling from the as-grown crystal matrix because of the retrograde solubility of Si.
Key words: floating zone technique; single crystal growth; rare earth compound; precipitate