Growth kinetics for intermetallic compound layer between
molten In−Sn alloy and CuZr-based bulk metallic glass
molten In−Sn alloy and CuZr-based bulk metallic glass
(1. Key Laboratory of Advanced Materials Fabrication Technology of Liaoning Province,
Shenyang University, Shenyang 110044, China
2. Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China)
Shenyang University, Shenyang 110044, China
2. Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China)
Abstract: The growth kinetics of intermetallic compound layer between molten In−Sn alloy and Cu40Zr44Al8Ag8 bulk metallic glass substrate was examined by solid state isothermal aging at the temperature range between 333 and 393 K. The aged samples were characterized by scanning electron microscopy and energy dispersive spectrometry. It is found that the intermetallic compound layer is composed of Zr, Cu and Sn. The layer growth of the intermetallic compound is mainly controlled by a diffusion mechanism over the temperature range and the value of the time exponent is approximately 0.5. The apparent activation energy for the growth of total intermetallic compound layers is 98.35 kJ /mol calculated by the Arrhenius equation.
Key words: bulk metallic glass; compound layer; kinetics; diffusion mechanism