Influence of pyrolysis temperature on structure and dielectric properties of polycarbosilane derived silicon carbide ceramic
(1. State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China;
2. College of Materials and Mineral Resources, Xi’an University of Architecture and Technology,
Xi’an 710055, China)
2. College of Materials and Mineral Resources, Xi’an University of Architecture and Technology,
Xi’an 710055, China)
Abstract: β-SiC ceramic powders were obtained by pyrolyzing polycarbosilane in vacuum at 800-1200 °C. The β-SiC ceramic powders were characterized by TGA/DSC, XRD and Raman spectroscopy. The dielectric properties of β-SiC ceramic powders were investigated by measuring their complex permittivity by rectangle wave guide method in the frequency range of 8.2-18 GHz. The results show that both real part ε′ and imaginary part ε″ of complex permittivity increase with increasing pyrolysis temperature. The mechanism was proposed that order carbon formed at high temperature resulted in electron relaxation polarization and conductance loss, which contributes to the increase in complex permittivity.
Key words: silicon carbide ceramic; polycarbosilane derived SiC; dielectric properties; pyrolysis temperature; free carbon; complex permittivity