Nanogrinding of SiC wafers with high flatness and low subsurface damage
(Key Laboratory for Precision and Non traditional Machining of Ministry of Education,
Dalian University of Technology, Dalian 116024, China)
Dalian University of Technology, Dalian 116024, China)
Abstract: Nanogrinding of SiC wafers with high flatness and low subsurface damage was proposed and nanogrinding experiments were carried out on an ultra precision grinding machine with fine diamond wheels. Experimental results show that nanogrinding can produce flatness less than 1.0 μm and a surface roughness Ra of 0.42 nm. It is found that nanogrinding is capable of producing much flatter SiC wafers with a lower damage than double side lapping and mechanical polishing in much less time and it can replace double side lapping and mechanical polishing and reduce the removal amount of chemical mechanical polishing.
Key words: SiC wafer; nanogrinding; cup wheel; flatness; surface roughness; damage