Effect of working pressure and temperature on ZnO film deposited on free-standing diamond substrates
(1.School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China2.Physics Department, Mudanjiang Normal College, Mudanjiang 157012, China)
Abstract: The structure characteristic and electric performance of ZnO film deposited on nucleation side of free-standing diamond substrates under different heating temperatures (Th) of substrate and working pressures (p) were studied. The structure of the ZnO films tested by X-ray diffraction shows that ZnO film of high c-axis orientation is deposited on the nucleation side of free-standing diamond substrate which is extremely smooth when Th=250 ℃ and p=0.4 Pa. After annealing at 480 ℃ in N2 atmosphere, the SEM and the AFM analyses demonstrate that the c-axis orientation of ZnO film is obviously enhanced. The resistivity of ZnO films also increases up to 8′105 W？cm which is observed by I？V test.
Key words: ZnO film; c-axis orientation; free-standing diamond film; surface acoustic wave device; radio-frequency magnetron sputtering