Characterization of (100)-orientated diamond film grown by HFCVD method with a positive DC bias voltage
(1.School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450052, China2.School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China3.Department of Electronic Materials, Shanghai University, Shanghai 200072, China4.Physics Department, Mudanjiang Normal College, Mudanjiang 157012, China)
Abstract: The (100)-orientated diamond film was deposited by hot-filament chemical vapor deposition (HFCVD) technology with a positive DC bias voltage. The morphology, X-ray diffraction (XRD), RAMAN spectrum and dark current versus applied voltage characteristics analysis show that the positive dc bias can increase the nucleation density and (100)-orientated growth, making the growth of the high quality diamond film easier and cheaper than using other methods.
Key words: (100)-orientation; diamond film;, HFCVD; positive bias