ISSN: 1003-6326
CN: 43-1239/TG
CODEN: TNMCEW

Vol. 16    Special 1    June 2006

[PDF]    
Influence of intermittently etching on quality of CVD diamond thin films
杨侃诚1,夏义本1,王林军1,苏青峰1,徐闰1,史伟民1,刘建敏2,彭鸿雁3
(1.School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China
2.Department of Electronic Materials, Shanghai University, Shanghai 200072, China
3.Physics Department, Mudanjiang Normal College, Mudanjiang 157012, China
)
Abstract: A new method, called growing-etching repetitional process based on hot filament chemical vapor deposition, was proposed to improve the quality of diamond film. During the deposition carbon source was intermittently closed letting hydrogen etch the surface of the diamond film from time to time. In order to find whether it is helpful to the films’ quality, a series of experiments were done. The results show that the new method can enhance the orientation of the chemical vapor deposition diamond films, reduce the graphite phase and increase the film’s surface resistivity.
Key words: hot filament chemical vapor deposition; diamond film; intermittently etching
Superintended by The China Association for Science and Technology (CAST)
Sponsored by The Nonferrous Metals Society of China (NFSOC)
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