Crystal growth of Gd2PdSi3 intermetallic compound
(1. School of Materials Science and Engineering, Chang’an University, Xi’an 710064, China;
2. Institute for Solid State Research, Leibniz-Institute for Solid State and Materials Research, Dresden 01171, Germany;
3. State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an, 710072, China)
2. Institute for Solid State Research, Leibniz-Institute for Solid State and Materials Research, Dresden 01171, Germany;
3. State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an, 710072, China)
Abstract: Gd2PdSi3 single crystals were grown by a vertical floating zone method with radiation heating at a zone traveling rate of 3 mm/h. The compound exhibited congruent melting behavior at a liquidus temperature of about 1700 °C. The slightly Pd-depleted composition of the crystal, with respect to the nominal Gd2PdSi3 stoichiometry, led to gradual accumulation of Pd in the traveling zone and to a decreasing operating temperature during the growth process. Thin platelet-like precipitates of a GdSi phase were detected in the stoichiometric feed rod growth crystal matrix which can be reduced by annealing treatment. Feed rod composition shift crystal growth was proved to be a better way of getting high quality of Gd2PdSi3 single crystal.
Key words: Gd2PdSi3; floating zone technique; single crystal growth; rare earth compounds; precipitates