Electroless plating and growth kinetics of Ni-P alloy film onSiCp/Al composite with high SiC volume fraction
(1. School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, China;
2. 43 Institute, China Electronics Technology Group Corporation, Hefei 230088, China;
3. Key laboratory of Functional Materials and Devices of Anhui Province,
Hefei University of Technology, Hefei 230009, China)
2. 43 Institute, China Electronics Technology Group Corporation, Hefei 230088, China;
3. Key laboratory of Functional Materials and Devices of Anhui Province,
Hefei University of Technology, Hefei 230009, China)
Abstract: After Sn/Pd activating, the SiCp/Al composite with 65% SiC (volume fraction) was coated by electroless Ni-P alloy plating. Surface morphology of the composite and its effect on the Ni-P alloy depositing process and bonding action of Ni and P atoms in the Ni-P alloy were studied. The results show that inhomogeneous distribution of the Sn/Pd activating points results in preferential deposition of the Ni-P alloy particles on the Al alloy and rough SiC particle surfaces and in the etched caves. The Ni-P alloy film has an amorphous structure where chemical bonding between Ni and P atoms exists. After a continuous Ni-P alloy film formed, electroless Ni-P alloy plating is not affected by surface morphology and characteristics of the SiCp/Al composite any longer, but by the electroless plating process itself. The Ni-P alloy film follows linear growth kinetics with an activation energy of 68.44 kJ/mol.
Key words: SiCp/Al composite; electroless plating; Ni-P alloy film; microstructure; growth kinetics