Enhancement of nucleation of diamond films deposited on copper substrate by nickel modification layer
(1. School of Materials Science and Engineering, Central South University, Changsha 410083, China;
2. State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China)
2. State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China)
Abstract: A Ni layer with a thickness of about 100 nm was sputtered on Cu substrates, followed by an ultrasonic seeding with nanodiamond suspension. High-quality diamond film with its crystalline grains close to thermal equilibrium shape was deposited on Cu substrates by hot-filament chemical vapor deposition (HF-CVD), and the sp2 carbon content was less than 5.56%. The nucleation and growth of diamond film were investigated by micro-Raman spectroscopy, scanning electron microscopy, and X-ray diffraction. The results show that the nucleation density of diamond on the Ni-modified Cu substrates is 10 times higher than that on blank Cu substrates. The enhancement mechanism of the nucleation kinetics by Ni modification layer results from two effects: namely, the nanometer rough Ni-modified surface shows an improved absorption of nanodiamond particles that act as starting points for the diamond nucleation during HF-CVD process; the strong catalytic effect of the Ni-modified surface causes the formation of graphite layer that acts as an intermediate to facilitate diamond nucleation quickly.
Key words: diamond film; nickel interlayer; Cu substrate; chemical vapor deposition; nucleation kinetics; surface modification