High electron mobility of modulation doped GaAs after growing InP by solid source molecular beam epitaxy
SHUYong-chun(舒永春),PIBiao(皮彪),LINYao-wang(林耀望), XINGXiao-dong(邢小东), YAOJiang-hong(姚江宏), WANGZ
High electron mobility of modulation doped GaAs after growing InP by solid source molecular beam epitaxy
SHUYong-chun(舒永春),PIBiao(皮彪),LINYao-wang(林耀望), XINGXiao-dong(邢小东), YAOJiang-hong(姚江宏), WANGZ
中国有色金属学报（英文版）
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2005, (02): 332
-335
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