High electron mobility of modulation doped GaAs after growing InP by solid source molecular beam epitaxy

SHUYong-chun(舒永春),PIBiao(皮彪),LINYao-wang(林耀望), XINGXiao-dong(邢小东), YAOJiang-hong(姚江宏), WANGZ

Transactions of Nonferrous Metals Society of China ›› 2005, Vol. 15 ›› Issue (02) : 332-335.

The Nonferrous Metals Society of China
Transactions of Nonferrous Metals Society of China ›› 2005, Vol. 15 ›› Issue (02) : 332-335.
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High electron mobility of modulation doped GaAs after growing InP by solid source molecular beam epitaxy

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2005, 15(02): 332-335

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