Efficient chemical mechanical polishing of W promoted by Fenton-like reaction between Cu2+ and H2O2

陈泓谕，王 林，彭 枫，沈蒙蒙，杭 伟，Tufa Habtamu BERI，张惠斌，赵 军，韩云晓，吕冰海

doi:10.1016/S1003-6326(24)66678-1

Transactions of Nonferrous Metals Society of China >

2025 , Vol. 35 >Issue 1: 257 - 270

DOI: https://doi.org/10.1016/S1003-6326(24)66678-1

Materials Science and Engineering

Efficient chemical mechanical polishing of W promoted by Fenton-like reaction between Cu²⁺ and H₂O₂

陈泓谕，王林，彭枫，沈蒙蒙，杭伟，Tufa Habtamu BERI，张惠斌，赵军，韩云晓，吕冰海

Expand

1. College of Mechanical Engineering, Zhejiang University of Technology, Hangzhou 310023, China;
2. Key Laboratory of Special Purpose Equipment and Advanced Processing Technology, Ministry of Education, Zhejiang University of Technology, Hangzhou 310023, China;
3. Adama Science and Technology University, Adama 1888, Ethiopia;
4. College of Materials Science and Engineering, Zhejiang University of Technology, Hangzhou 310014, China

Online published: 2025-11-04

Fold

Abstract

The Fenton-like reaction between Cu²⁺ and H₂O₂ was employed in chemical mechanical polishing to achieve efficient and high-quality processing of tungsten. The microstructure evolution and material removal rate of tungsten during polishing process were investigated via scanning electron microscopy, X-ray photoelectron spectroscopy, ultraviolet-visible spectrophotometry, and electrochemical experiments. The passivation behavior and material removal mechanism were discussed. Results show that the use of mixed H₂O₂+Cu(NO₃)₂ oxidant can achieve higher polishing efficiency and surface quality compared with the single oxidant Cu(NO₃)₂ or H₂O₂. The increase in material removal rate is attributed to the rapid oxidation of W into WO₃ via the chemical reaction between the substrate and hydroxyl radicals produced by the Fenton-like reaction. In addition, material removal rate and static etch rate exhibit significantly different dependencies on the concentration of Cu(NO₃)₂, while the superior oxidant for achieving the balance between polishing efficiency and surface quality is 0.5 wt.% H₂O₂+1.0 wt.% Cu(NO₃)₂.

Key words： chemical mechanical polishing; tungsten; Fenton-like reaction; hydroxyl radical; material removal mechanism

Cite this article

陈泓谕，王林，彭枫，沈蒙蒙，杭伟，Tufa Habtamu BERI，张惠斌，赵军，韩云晓，吕冰海 . Efficient chemical mechanical polishing of W promoted by Fenton-like reaction between Cu²⁺ and H₂O₂[J]. Transactions of Nonferrous Metals Society of China, 2025 , 35(1) : 257 -270 . DOI: 10.1016/S1003-6326(24)66678-1

Options

Outlines

模态框（Modal）标题

Abstract

Cite this article